DocumentCode
573042
Title
Design a V-band 4×4 Butler matrix for switched beam-forming operation
Author
Jian Zhang ; Vincent, François
Author_Institution
ECIT, Queens Univ. of Belfast, Belfast, UK
fYear
2011
fDate
12-12 Sept. 2011
Firstpage
83
Lastpage
86
Abstract
A compact V-band 4×4 Butler matrix, using 0.35 μm SiGe bipolar process, is proposed in this work. This design exhibits an average insertion loss of 3 dB with amplitude variation less than 1.5 dB and an average phase imbalance of less than 10 degrees from 55 GHz to 65 GHz. The chip area is only 0.5×0.9 mm2 including all pads. The SiGe Butler matrix is an excellent candidate for MIMO systems and applied in high data-rate communications.
Keywords
Ge-Si alloys; millimetre wave circuits; switched networks; SiGe; SiGe bipolar process; chip area; compact V-band Butler matrix; frequency 55 GHz to 65 GHz; phase imbalance; size 0.35 mum; switched beam-forming operation; Butler matrix; SiGe; beam-forming;
fLanguage
English
Publisher
iet
Conference_Titel
Active RF Devices, Circuits and Systems Seminar
Conference_Location
Belfast
Electronic_ISBN
978-1-84919-540-9
Type
conf
DOI
10.1049/ic.2011.0217
Filename
6309329
Link To Document