DocumentCode
573046
Title
Direct nitridation of silicon surface by high-density inductively coupled plasma
Author
Antonenko, A. Kh ; Arzhannikova, S.A. ; Volodin, V.A. ; Efremov, M.D. ; Zazulya, P.S. ; Kamaev, G.N.
Author_Institution
Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
fYear
2012
fDate
2-6 July 2012
Firstpage
45
Lastpage
46
Abstract
Ultra-thin silicon oxy-nitride films were created. The films were obtained by using direct N plasma treatment in plasma-chemical reactor with a wide aperture source. Properties of the films were examined by various methods and their good electron quality was confirmed. Features of film growth mechanism are discussed.
Keywords
dielectric thin films; nitridation; plasma density; plasma materials processing; silicon compounds; sputter etching; Si; aperture source; direct N plasma treatment; direct nitridation; film growth mechanism; good electron quality; high-density inductively coupled plasma; plasma chemical reactor; silicon surface; ultrathin silicon oxynitride films; Films; Nanoscale devices; Plasmas; Seminars; Silicon; Substrates; Surface treatment; Nitridation; Plasma treatment; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2012 IEEE 13th International Conference and Seminar of Young Specialists on
Conference_Location
Erlagol, Altai
Print_ISBN
978-1-4673-2517-2
Type
conf
DOI
10.1109/EDM.2012.6310184
Filename
6310184
Link To Document