AFM tip-induced modification of semiconductor surface properties

Author

Kozhukhov, Anton S. ; Sheglov, Dmitriy V. ; Latyshev, Alexander V.

Author_Institution

A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2012

fDate

2-6 July 2012

Firstpage

23

Lastpage

25

Abstract

The method to change surface potential by atomic force microscope (AFM) probe is demonstrated and used. The possibilities of two dimensional electron gas reversible modulations are demonstrated on the example of nanoscale local AFM tip-induced surface nanomodification of heteroepitaxial AlGaAs/GaAs. The surface potential modulation is shown to be 100 mV with sample resistance change being 20-40 KOhm. Surface potential change is detected by Kelvin Scanning Probe Microscopy (KSPM).

Keywords

III-V semiconductors; aluminium compounds; atomic force microscopy; gallium arsenide; surface conductivity; surface potential; two-dimensional electron gas; 2D electron gas reversible modulation; AFM tip induced modification; AlGaAs-GaAs; Kelvin Scanning Probe Microscopy; atomic force microscope probe; semiconductor surface properties; surface nanomodification; surface potential; Electric potential; Force; Microscopy; Probes; Surface resistance; Surface topography; AFM; Kelvin Scanning Probe Microscopy; surface potential;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2012 IEEE 13th International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-4673-2517-2

Type

conf

DOI

10.1109/EDM.2012.6310237

Filename

6310237