Title :
Nanointervention into crystal flatland. III. Crystal growth and micromorphology of cleaved GaSe(001) surface
Author :
Kozhukhov, Anton S. ; Gavrilova, Tatiana A. ; Kokh, Konstantin A. ; Atuchin, Victor V.
Author_Institution :
Lab. of Nanodiagnostics & Nanolithography, A.V.Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
Optical quality GaSe crystals with diameter of 10 mm have been grown by modified Bridgman method using unusual oscillating temperature regime in the middle zone at the level of crystallization front. Cleaved surface (001) has been evaluated by SEM and AFM. Basic cleaved surface with area up to ~200 mm2 is flat with as low rms parameter as 0,3 nm. Such local defects as hillocks up to 35 nm and mesostructure are observed by SEM and AFM.
Keywords :
III-VI semiconductors; atomic force microscopy; crystal growth from melt; crystal morphology; crystallisation; gallium compounds; scanning electron microscopy; semiconductor growth; AFM; Bridgman method; GaSe; GaSe(001) surface; SEM; cleaved surface; crystal flatland; crystal growth; crystallization; defects; mesostructure; micromorphology; optical quality; oscillating temperature; size 10 mm; Annealing; Crystals; Frequency conversion; Gases; Optimized production technology; Physics; Surface morphology; AFM; Gallium selenide; SEM; cleavage; crystal growth;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2012 IEEE 13th International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-4673-2517-2
DOI :
10.1109/EDM.2012.6310248
