Nanointervention into crystal flatland. III. Crystal growth and micromorphology of cleaved GaSe(001) surface

Author

Kozhukhov, Anton S. ; Gavrilova, Tatiana A. ; Kokh, Konstantin A. ; Atuchin, Victor V.

Author_Institution

Lab. of Nanodiagnostics & Nanolithography, A.V.Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2012

fDate

2-6 July 2012

Firstpage

26

Lastpage

28

Abstract

Optical quality GaSe crystals with diameter of 10 mm have been grown by modified Bridgman method using unusual oscillating temperature regime in the middle zone at the level of crystallization front. Cleaved surface (001) has been evaluated by SEM and AFM. Basic cleaved surface with area up to ~200 mm² is flat with as low rms parameter as 0,3 nm. Such local defects as hillocks up to 35 nm and mesostructure are observed by SEM and AFM.

Keywords

III-VI semiconductors; atomic force microscopy; crystal growth from melt; crystal morphology; crystallisation; gallium compounds; scanning electron microscopy; semiconductor growth; AFM; Bridgman method; GaSe; GaSe(001) surface; SEM; cleaved surface; crystal flatland; crystal growth; crystallization; defects; mesostructure; micromorphology; optical quality; oscillating temperature; size 10 mm; Annealing; Crystals; Frequency conversion; Gases; Optimized production technology; Physics; Surface morphology; AFM; Gallium selenide; SEM; cleavage; crystal growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2012 IEEE 13th International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-4673-2517-2

Type

conf

DOI

10.1109/EDM.2012.6310248

Filename

6310248