Title :
Total Ionizing Dose Effects in Si-Based Tunnel FETs
Author :
Lili Ding ; Gnani, Elena ; Gerardin, Simone ; Bagatin, Marta ; Driussi, Francesco ; Palestri, Pierpaolo ; Selmi, Luca ; Le Royer, Cyrille ; Paccagnella, Alessandro
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padua, Italy
Abstract :
Total ionizing dose (TID) effects in Si-based tunnel finite element transfers (FETs) were investigated for the first time. Under 10-keV X-ray irradiation environment, along with the increase in total dose, a shift of the transfer characteristics and an increase in the interface trap density could be observed. After irradiation at 1 Mrad (SiO2) (and higher dose), the threshold voltage and the band-to-band tunneling conduction were only modestly affected, despite the thick buried oxide (140 nm). In contrast, under the same bias and irradiation environment, a FDSOI nMOSFET fabricated with a similar process presented a more severe degradation, suggesting the robustness of TFETs against TID effects. The underlying mechanism was explored through device simulation and ascribed to be due to the peculiarity of the doping structures of TFETs.
Keywords :
X-ray effects; field effect transistors; finite element analysis; semiconductor device models; FDSOI nMOSFET; Si; Si based tunnel FETs; Si-based tunnel finite element transfers; TFET robustness; TID effects; X-ray irradiation environment; band-band tunneling conduction; device simulation; doping structures; electron volt energy 10 keV; interface trap density; size 140 nm; thick buried oxide; threshold voltage; total ionizing dose effects; transfer characteristics shift; Charge pumps; Current measurement; Field effect transistors; Pulse measurements; Radiation effects; Tunneling; Band-to-band tunneling (BTBT); total ionizing dose effects; tunnel FET;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2367548