• DocumentCode
    5740
  • Title

    Changing the channel

  • Author

    Stevenson, Ricky

  • Volume
    50
  • Issue
    7
  • fYear
    2013
  • fDate
    Jul-13
  • Firstpage
    34
  • Lastpage
    39
  • Abstract
    The transistor isn´t shrinking the way it used to. The best ones we have today are a patchwork of fixes and kludges: speed-boosting materials that push or pull on the silicon center, exotic insulators added to stanch leaks, and a new geometry that pops things out of the plane of the chip and into the third dimension. Now, to keep Moore´s Law going, chipmakers are eyeing another monumental change in transistor architecture. This time, they´re taking aim at the current-carrying channels at the very heart of the device, replacing the silicon there with germanium and compound semiconductors known as III-Vs. If all goes well, these materials could usher in a new generation of speedier, less power-hungry transistors, allowing for denser, faster, cooler-running chips.
  • Keywords
    III-V semiconductors; germanium; insulators; transistors; III-V semiconductor; Moore Law; compound semiconductor; current-carrying channel; exotic insulator; germanium; silicon; speed-boosting material; transistor architecture; Crystals; Indium phosphide; Semiconductor devices; Silicon; Transistors;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.2013.6545120
  • Filename
    6545120