DocumentCode :
5740
Title :
Changing the channel
Author :
Stevenson, Ricky
Volume :
50
Issue :
7
fYear :
2013
fDate :
Jul-13
Firstpage :
34
Lastpage :
39
Abstract :
The transistor isn´t shrinking the way it used to. The best ones we have today are a patchwork of fixes and kludges: speed-boosting materials that push or pull on the silicon center, exotic insulators added to stanch leaks, and a new geometry that pops things out of the plane of the chip and into the third dimension. Now, to keep Moore´s Law going, chipmakers are eyeing another monumental change in transistor architecture. This time, they´re taking aim at the current-carrying channels at the very heart of the device, replacing the silicon there with germanium and compound semiconductors known as III-Vs. If all goes well, these materials could usher in a new generation of speedier, less power-hungry transistors, allowing for denser, faster, cooler-running chips.
Keywords :
III-V semiconductors; germanium; insulators; transistors; III-V semiconductor; Moore Law; compound semiconductor; current-carrying channel; exotic insulator; germanium; silicon; speed-boosting material; transistor architecture; Crystals; Indium phosphide; Semiconductor devices; Silicon; Transistors;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.2013.6545120
Filename :
6545120
Link To Document :
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