Title :
Influence of N incorporation on the carrier concentration of sputtering-deposited a-GaAs1−xNx thin films
Author :
Jia, Baoshan ; Zhou, Lu ; Wang, Yuhua ; Bai, Duanyuan ; Qiao, Zhongliang ; Gao, Xin ; Bo, Baoxue
Author_Institution :
State Key Lab. of High-Power Semicond. Laser, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
This work reported the changes in the carrier concentration of a-GaAs1-xNx thin films with different x value. The films were deposited by reactive magnetron sputtering at different sputtering pressure. The N content in the film increases by increasing the sputtering pressures. The free carrier concentration is increased as the N content increased.
Keywords :
III-V semiconductors; amorphous semiconductors; carrier density; gallium arsenide; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; GaAs1-xNx; N incorporation; free carrier concentration; reactive magnetron sputtering; sputtering pressure; sputtering-deposited thin films; Gallium arsenide; Integrated optics; Optical films; Optical filters; Sputtering; Substrates; a-GaAsN thin films; carrier concentration Introduction; sputtering deposition;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316204
