DocumentCode :
574916
Title :
Progress on the GaN-based LEDs and LDs
Author :
Wang, Yong ; Zou, Yonggang ; Ma, Xiaohui ; Yu, Naisen ; Deng, Dongmei ; Lau, Kei May
Author_Institution :
Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
fYear :
2012
fDate :
23-25 Aug. 2012
Firstpage :
105
Lastpage :
110
Abstract :
The GaN-based light emitting diodes (LEDs) and laser diodes (LDs) have extensive applications in LED display, high brightness illumination, traffic signals, streetlights, automotive for LEDs, and high density optical storage, full-color display, laser printing, and laser lighting for LDs. The progress of the GaN-based LEDs and LDs is introduced. There are many universities and companies focusing on their research on the GaN LEDs and LDs, and the great breakthroughs have been achieved in the GaN material, process techniques, growth on non-polar and semi-polar substrates, and high extraction efficiency for LEDs. But there are still some challenges for the commercial applications such as selection of the appropriate substrates, quantum confined Stark effect (QCSE), and catastrophic optical damage (COD) for LDs. And the possible solutions are proposed in order to eliminate or decrease the difficulties.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; quantum confined Stark effect; quantum well lasers; wide band gap semiconductors; COD; GaN; GaN LD; GaN LED; QCSE; catastrophic optical damage; extraction efficiency; laser diodes; light emitting diodes; material growth; nonpolar substrates; process techniques; quantum confined Stark effect; semipolar substrates; Epitaxial growth; Gallium nitride; Light emitting diodes; Lighting; Power generation; Substrates; GaN; LD; LED;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
Type :
conf
DOI :
10.1109/ICoOM.2012.6316228
Filename :
6316228
Link To Document :
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