DocumentCode
574918
Title
The design of short wavelength light emitting diodes
Author
Zhao, Zhibin ; Te, Qu Yi Li ; Hao, Yang ; Shuai, Yu ; Lei, Liu ; Chao-qun, Tian ; Dong-han, Wei
Author_Institution
Nat. Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
fYear
2012
fDate
23-25 Aug. 2012
Firstpage
136
Lastpage
137
Abstract
We demonstrate the structure from AlGaN-based multiple quantum well light emitting diodes at very short wavelength. Using software APSYS to simulate, 280nm wavelength can be achieved.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; optical design techniques; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; AlGaN; multiple quantum well light emitting diodes; short wavelength light emitting diodes; software APSYS; wavelength 280 nm; Aluminum gallium nitride; Gallium nitride; Lattices; Light emitting diodes; Materials; Microelectronics; Radiative recombination; AlGaN multiple quantum well; light emitting diodes; software APSYS simulation; ultraviolet light source;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location
Changchun, Jilin
Print_ISBN
978-1-4673-2638-4
Type
conf
DOI
10.1109/ICoOM.2012.6316235
Filename
6316235
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