• DocumentCode
    575072
  • Title

    Double stack passivation layer with effective lifetime for crypto-processor

  • Author

    Lee, Young Sil ; Jang, Won Tae ; Lee, Hoon Jae

  • Author_Institution
    Dept. of Ubiquitous IT, Dongseo Univ., Busan, South Korea
  • fYear
    2011
  • fDate
    Nov. 29 2011-Dec. 1 2011
  • Firstpage
    707
  • Lastpage
    710
  • Abstract
    In this paper, we propose a double stack layer which double stack layers by SiO2/SiNx passivate on the wafer. The proposed passivation layer is deposited SiN1 by PECVD on the wafer and then deposited silicon oxide (SiO2) b RTP. Finally, form the final metal layer using silicon nitride by PECVD. Our propose passivation layer can provide effective lifetime then conventional passivation layer by SiNx/SiO2 double stack layer and can provide robust passivation layer through metal layer on the top of chip.
  • Keywords
    cryptography; microprocessor chips; passivation; PECVD; SiO2-SiN; crypto-processor; deposited silicon oxide; double stack passivation layer; effective lifetime; silicon nitride;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Sciences and Convergence Information Technology (ICCIT), 2011 6th International Conference on
  • Conference_Location
    Seogwipo
  • Print_ISBN
    978-1-4577-0472-7
  • Type

    conf

  • Filename
    6316708
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=575072