An Ultra Wideband Quasi-Circulator With Distributed Amplifiers Using 90 nm CMOS Technology

Author

Shih-Han Hung ; Kai-Wen Cheng ; Yeong-Her Wang

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

Volume

23

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

656

Lastpage

658

Abstract

An ultra wideband (UWB) quasi-circulator implemented with distributed amplifiers using the 90 nm complementary metal-oxide-semiconductor (CMOS) technology is presented. The proposed quasi-circulator is composed of two distributed amplifiers and two Lange couplers to attain UWB performance at 14 to 67 GHz. Good insertion gain of 4.3 dB to -3.5 dB, low noise figure of 7.1 to 12.6 dB, and good isolation characteristic of |S31| better than 20 dB can be obtained. Using the distributed amplifier technique, the proposed quasi-circulator offers significant advantages of broad operation bandwidth, high isolation, low noise figure, and good insertion gain.

Keywords

CMOS analogue integrated circuits; distributed amplifiers; microwave circulators; millimetre wave circulators; ultra wideband technology; CMOS technology; Lange couplers; UWB performance; broad operation bandwidth; complementary metal-oxide-semiconductor technology; distributed amplifiers; frequency 14 GHz to 67 GHz; gain 4.3 dB to -3.5 dB; insertion gain; isolation characteristic; noise figure; noise figure 7.1 dB to 12.6 dB; size 90 nm; ultra wideband quasicirculator; Bandwidth; CMOS integrated circuits; CMOS technology; Couplers; Distance measurement; Radio frequency; Ultra wideband communication; CMOS; distributed amplifier; quasi-circulator; ultra wideband (UWB);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2013.2283864

Filename

6636105