Title :
Time and Frequency Domain Characterization of Transistor Self-Heating
Author :
Makovejev, S. ; Olsen, Svein Harald ; Kilchytska, V. ; Raskin, Jean-Pierre
Author_Institution :
Sch. of Electr. & Electron. Eng., Newcastle Univ., Newcastle upon Tyne, UK
Abstract :
Pulsed I-V and AC conductance or RF characterization techniques, within the time and the frequency domain, respectively, represent two approaches for evaluating self-heating in MOSFETs. In this paper, these methods are compared. Advantages and limitations of each technique are discussed and experimentally verified in silicon-on-insulator (SOI) MOSFETs. It is demonstrated that RF technique and the pulsed I-V hot chuck method agree well for the studied 130-nm-node partially depleted SOI devices. Applicability of the techniques for advanced technologies is discussed.
Keywords :
MOSFET; frequency-domain analysis; silicon-on-insulator; time-domain analysis; RF characterization technique; SOI MOSFET; depleted SOI device; frequency domain characterization; silicon on insulator; time domain characterization; transistor self heating; Pulsed $Ihbox{--}V$; RF; self-heating; silicon on insulator (SOI);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2259174
