DocumentCode
57578
Title
A Reconfigurable Low-Power BDD Logic Architecture Using Ferroelectric Single-Electron Transistors
Author
Lu Liu ; Xueqing Li ; Narayanan, Vijaykrishnan ; Datta, Suman
Author_Institution
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Volume
62
Issue
3
fYear
2015
fDate
Mar-15
Firstpage
1052
Lastpage
1057
Abstract
This paper presents ferroelectric single-electron transistors (SETs) with tunable tunnel barriers and their application in a reconfigurable binary decision diagram (BDD) logic architecture. In this experimental demonstration, the SETs can be programmed into short, open, and Coulomb blockade modes to construct the BDD fabric. We experimentally demonstrate the decision node, consisting of two SETs, with robust path switching characteristics. Harnessing such programmability and path switching features, a nonvolatile reconfigurable low-power BDD logic is achieved. A ferroelectric dielectric-based split gate configuration and a differential biasing scheme are utilized to share the programming resources and reduce the energy consumption. Peripheral interface circuits are designed to recover the output signal swing for cascaded BDD logic demonstration and to provide noise immunity. The simulation shows that with sufficient circuitry complexity or a latched dynamic CMOS interface, the proposed BDD architecture achieves higher power efficiency than CMOS at the same throughput delay.
Keywords
CMOS logic circuits; binary decision diagrams; ferroelectric devices; logic design; low-power electronics; peripheral interfaces; single electron transistors; circuitry complexity; decision node; energy consumption; ferroelectric dielectric-based split gate configuration; ferroelectric single-electron transistors; latched dynamic CMOS interface; noise immunity; nonvolatile reconfigurable low-power BDD logic; peripheral interface circuits; reconfigurable binary decision diagram logic architecture; reconfigurable low-power BDD logic architecture; tunable tunnel barriers; Boolean functions; CMOS integrated circuits; Data structures; Fabrics; Logic gates; Programming; Switches; Binary decision diagram (BDD); Coulomb blockade; ferroelectric; nonvolatile; sense amplifier; single-electron transistor (SET); single-electron transistor (SET).;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2395252
Filename
7035087
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