Title :
4 × 24 Gb/s 27 — 1 PRBS generator using 1.8 V MOS-HBT quasi-CML logic
Author :
Kozlov, Victor ; Park, Paul ; Voinigescu, Sorin P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
An ultra-low-power, 27 - 1 PRBS generator with four, appropriately delayed, parallel output streams was fabricated in a production 130-nm SiGe BiCMOS technology with HBT fT /fMAX of 230/280 GHz. The circuit is based on a 1.8 V MOS-HBT quasi-CML family and operates with serial data rates up to 24 Gb/s. It consumes 196 mW from 1.8 V, corresponding to only 49 mW per 24 Gb/s data lane or 2.04 pJ/bit.
Keywords :
BiCMOS logic circuits; Ge-Si alloys; MOS logic circuits; current-mode logic; heterojunction bipolar transistors; low-power electronics; signal generators; BiCMOS technology; MOS-HBT quasiCML logic; SiGe; bit rate 24 Gbit/s; frequency 230 GHz; frequency 280 GHz; parallel output streams; power 196 mW; size 130 nm; ultra-low-power 27-1 PRBS generator; voltage 1.8 V; BiCMOS integrated circuits; Clocks; Flip-flops; Generators; Latches; Logic gates; Silicon germanium; Built-in self-test; D-type flip-flop; PRBS generator; SiGe BiCMOS; current mode circuits;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352614
