Title :
A highly efficient watt-level SiGe BiCMOS power amplifier with envelope tracking for LTE applications
Author :
Wu, Ruili ; Li, Yan ; Lopez, Jerry ; Lie, Donald Y C
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
In this paper, a pseudo-differential power amplifier (PA) is designed using two SiGe power cells fabricated in the 0.35-μm IBM 5PAe SiGe BiCMOS technology with through-wafer-vias (TWVs). In the continuous wave (CW) measurement, the PA achieves a 2-watt level saturated POUT with power-added-efficiency (PAE) above 65% across the bandwidth of 0.7-1 GHz. The envelope tracking (ET) technique is then applied to the PA for enhanced efficiency using the LTE 16QAM signals with a peak-to-average-ratio (PAR) of 7.5 dB. Beside a conventional single buck converter based envelope modulator (SBEM), a dual buck converter based envelope modulator (DBEM) is also designed for higher power drivability. Measurement shows the ET-PA systems can transmit linear POUT of 25/24 dBm with system PAE of 40%/32% at 750 MHz for LTE 16QAM 5/20 MHz signals.
Keywords :
BiCMOS analogue integrated circuits; DC-DC power convertors; Ge-Si alloys; Long Term Evolution; integrated circuit design; integrated circuit measurement; modulators; power amplifiers; quadrature amplitude modulation; three-dimensional integrated circuits; CW measurement; DBEM; ET technique; ET-PA systems; LTE 16QAM signals; LTE applications; PAE; PAR; SBEM; SiGe; SiGe power cells; TWV; continuous wave measurement; dual buck converter-based envelope modulator; envelope tracking technique; highly efficient watt-level BiCMOS power amplifier; peak-to-average-ratio; power added efficiency; power drivability; pseudodifferential PA; pseudodifferential power amplifier design; single buck converter-based envelope modulator; size 0.35 mum; through-wafer-vias; BiCMOS integrated circuits; CMOS integrated circuits; Frequency measurement; Modulation; Power amplifiers; Radio frequency; Silicon germanium; LTE; SiGe power amplifier; envelope modulator; envelope tracking (ET);
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352618