State-of-the-art and future perspectives in calibration and de-embedding techniques for characterization of advanced SiGe HBTs featuring sub-THz fT/fMAX

Author

Derrier, N. ; Rumiantsev, A. ; Celi, D.

Author_Institution

STMicroelectron., Crolles, France

fYear

2012

fDate

Sept. 30 2012-Oct. 3 2012

Firstpage

1

Lastpage

8

Abstract

This paper presents an overview of RF calibration and pad de-embedding techniques, discusses limitations and demonstrates methods for accuracy improvement applicable for the characterization of advanced BiCMOS HBTs. The impact of the reference plane location is discussed. Numerous experiments with different device geometries showed that the in-situ (on-wafer) calibration yields the most accurate results. For a probe-tip calibration, a multiple-dummy de-embedding is crucial to improve measurement accuracy. A comparison with the compact model (HICUM V2.30) confirmed the findings.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; S-parameters; calibration; heterojunction bipolar transistors; probes; semiconductor device testing; BiCMOS HBT; HICUM V2.30; RF calibration; SiGe; accuracy improvement; heterojunction bipolar transistors; multiple dummy de-embedding; on-wafer calibration; pad de-embedding techniques; probe tip calibration; reference plane location; Accuracy; Calibration; Impedance; Metals; Probes; Standards; Transistors; Bipolar modeling and simulation; HF measurements; S-parameters; SiGe HBT; calibration; de-embedding;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE

Conference_Location

Portland, OR

ISSN

1088-9299

Print_ISBN

978-1-4673-3020-6

Type

conf

DOI

10.1109/BCTM.2012.6352639

Filename

6352639