HBT device robustness against process variations in millimeter-wave BiCMOS technology

Author

Avenier, G. ; Chevalier, P. ; Montagné, A. ; Parmigiani, L. ; Berthier, L. ; Renault, O. ; Oghdayan, E. ; Mathieu, M. ; Campidelli, Y. ; Dutartre, D. ; Chantre, A.

Author_Institution

STMicroelectron., Crolles, France

fYear

2012

fDate

Sept. 30 2012-Oct. 3 2012

Firstpage

1

Lastpage

4

Abstract

Device electrical parameters and performance after optimization are often presented in literature. However, publications rarely address device stability versus process dispersion. Such a study was performed on the high-speed Si/SiGe heterojunction bipolar transistor (HS HBT) from a millimeter-wave BiCMOS technology. The process parameters were intentionally de-centered during the fabrication to monitor device electrical response and evaluate potential weaknesses or instability. This paper presents the results of this work and demonstrates the device robustness.

Keywords

BiCMOS integrated circuits; heterojunction bipolar transistors; millimetre wave circuits; HBT device robustness; Si-SiGe; device electrical parameter; device electrical response monitoring; device stability; heterojunction bipolar transistor; millimeter-wave BiCMOS technology; process dispersion; process variation; BiCMOS integrated circuits; Heterojunction bipolar transistors; Performance evaluation; Resistance; Robustness; Silicon germanium; Silicon bipolar/BiCMOS process technology; device physics; device robustness; semiconductor manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE

Conference_Location

Portland, OR

ISSN

1088-9299

Print_ISBN

978-1-4673-3020-6

Type

conf

DOI

10.1109/BCTM.2012.6352652

Filename

6352652