Title :
HBT device robustness against process variations in millimeter-wave BiCMOS technology
Author :
Avenier, G. ; Chevalier, P. ; Montagné, A. ; Parmigiani, L. ; Berthier, L. ; Renault, O. ; Oghdayan, E. ; Mathieu, M. ; Campidelli, Y. ; Dutartre, D. ; Chantre, A.
Author_Institution :
STMicroelectron., Crolles, France
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
Device electrical parameters and performance after optimization are often presented in literature. However, publications rarely address device stability versus process dispersion. Such a study was performed on the high-speed Si/SiGe heterojunction bipolar transistor (HS HBT) from a millimeter-wave BiCMOS technology. The process parameters were intentionally de-centered during the fabrication to monitor device electrical response and evaluate potential weaknesses or instability. This paper presents the results of this work and demonstrates the device robustness.
Keywords :
BiCMOS integrated circuits; heterojunction bipolar transistors; millimetre wave circuits; HBT device robustness; Si-SiGe; device electrical parameter; device electrical response monitoring; device stability; heterojunction bipolar transistor; millimeter-wave BiCMOS technology; process dispersion; process variation; BiCMOS integrated circuits; Heterojunction bipolar transistors; Performance evaluation; Resistance; Robustness; Silicon germanium; Silicon bipolar/BiCMOS process technology; device physics; device robustness; semiconductor manufacturing;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352652
