DocumentCode :
576748
Title :
Characterization of Radiation Hardened Bipolar Linear Devices for High Total Dose Missions
Author :
McClure, Steven S. ; Harris, Richard D. ; Rax, Bernard G. ; Thorbourn, Dennis O.
Author_Institution :
Jet Propulsion Lab., Pasadena, CA, USA
fYear :
2012
fDate :
16-20 July 2012
Firstpage :
1
Lastpage :
6
Abstract :
Radiation hardened linear devices were characterized for performance in combined total dose and displacement damage environments for a mission scenario with a high radiation level. Performance at low and high dose rate for both biased and unbiased conditions are compared and the impact to hardness assurance methodology is discussed.
Keywords :
radiation hardening (electronics); displacement damage environments; hardness assurance methodology; high radiation level; high total dose missions; radiation hardened bipolar linear devices; Degradation; Laboratories; Performance evaluation; Protons; Radiation effects; Radiation hardening; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2012 IEEE
Conference_Location :
Tucson, AZ
ISSN :
2154-0519
Print_ISBN :
978-1-4673-2730-5
Type :
conf
DOI :
10.1109/REDW.2012.6353733
Filename :
6353733
Link To Document :
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