DocumentCode :
57709
Title :
Level-Converting Retention Flip-Flop for Reducing Standby Power in ZigBee SoCs
Author :
Jung-Hyun Park ; Heechai Kang ; Dong-Hoon Jung ; Kyungho Ryu ; Seong-Ook Jung
Author_Institution :
Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Volume :
23
Issue :
3
fYear :
2015
fDate :
Mar-15
Firstpage :
413
Lastpage :
421
Abstract :
In this paper, we propose a level-converting retention flip-flop (RFF) for ZigBee systems-on-chips (SoCs). The proposed RFF allows the voltage regulator that generates the core supply voltage (VDD,core) to be turned off in the standby mode, and it thus reduces the standby power of the ZigBee SoCs. The logic states are retained in a slave latch composed of thick-oxide transistors using an I/O supply voltage (VDD,IO) that is always turned on. Level-up conversion from VDD,core to VDD,IO is achieved by an embedded nMOS pass-transistor level-conversion scheme that uses a low-only signal-transmitting technique. By embedding a retention latch and level-up converter into the data-to-output path of the proposed RFF, the RFF resolves the problems of the static RAM-based RFF, such as large dc current and low readability caused by threshold drop. The proposed RFF does not also require additional control signals for power mode transitioning. Using 0.13-μm process technology, we implemented an RFF with VDD,core and VDD,IO of 1.2 and 2.5 V, respectively. The maximum operating frequency is 300 MHz. The active energy of the RFF is 191.70 fJ, and its standby power is 350.25 pW.
Keywords :
MOSFET; UHF integrated circuits; Zigbee; flip-flops; random-access storage; system-on-chip; voltage regulators; I-O supply voltage; ZigBee SoC; core supply voltage generation; data-to-output path; embedded nMOS pass-transistor level-conversion scheme; energy 191.70 fJ; frequency 300 MHz; level-converting retention flip-flop; logic state; low-only signal-transmitting technique; power 350.25 pW; retention latch; size 0.13 mum; slave latch; standby power reduction; static RAM-based RFF; systems-on-chip; thick-oxide transistor; voltage 1.2 V; voltage 2.5 V; voltage regulator; Latches; Leakage currents; Regulators; System-on-chip; Transistors; Voltage control; Zigbee; I/O supply voltage; retention flip-flop (RFF); standby leakage current; standby mode; thick-oxide transistor; thick-oxide transistor.;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2014.2311851
Filename :
6781586
Link To Document :
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