• DocumentCode
    57709
  • Title

    Level-Converting Retention Flip-Flop for Reducing Standby Power in ZigBee SoCs

  • Author

    Jung-Hyun Park ; Heechai Kang ; Dong-Hoon Jung ; Kyungho Ryu ; Seong-Ook Jung

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
  • Volume
    23
  • Issue
    3
  • fYear
    2015
  • fDate
    Mar-15
  • Firstpage
    413
  • Lastpage
    421
  • Abstract
    In this paper, we propose a level-converting retention flip-flop (RFF) for ZigBee systems-on-chips (SoCs). The proposed RFF allows the voltage regulator that generates the core supply voltage (VDD,core) to be turned off in the standby mode, and it thus reduces the standby power of the ZigBee SoCs. The logic states are retained in a slave latch composed of thick-oxide transistors using an I/O supply voltage (VDD,IO) that is always turned on. Level-up conversion from VDD,core to VDD,IO is achieved by an embedded nMOS pass-transistor level-conversion scheme that uses a low-only signal-transmitting technique. By embedding a retention latch and level-up converter into the data-to-output path of the proposed RFF, the RFF resolves the problems of the static RAM-based RFF, such as large dc current and low readability caused by threshold drop. The proposed RFF does not also require additional control signals for power mode transitioning. Using 0.13-μm process technology, we implemented an RFF with VDD,core and VDD,IO of 1.2 and 2.5 V, respectively. The maximum operating frequency is 300 MHz. The active energy of the RFF is 191.70 fJ, and its standby power is 350.25 pW.
  • Keywords
    MOSFET; UHF integrated circuits; Zigbee; flip-flops; random-access storage; system-on-chip; voltage regulators; I-O supply voltage; ZigBee SoC; core supply voltage generation; data-to-output path; embedded nMOS pass-transistor level-conversion scheme; energy 191.70 fJ; frequency 300 MHz; level-converting retention flip-flop; logic state; low-only signal-transmitting technique; power 350.25 pW; retention latch; size 0.13 mum; slave latch; standby power reduction; static RAM-based RFF; systems-on-chip; thick-oxide transistor; voltage 1.2 V; voltage 2.5 V; voltage regulator; Latches; Leakage currents; Regulators; System-on-chip; Transistors; Voltage control; Zigbee; I/O supply voltage; retention flip-flop (RFF); standby leakage current; standby mode; thick-oxide transistor; thick-oxide transistor.;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2014.2311851
  • Filename
    6781586