• DocumentCode
    577271
  • Title

    Analysis of partial discharge activity in line-commutated HVDC converter

  • Author

    Tianyan Jiang ; Cavallini, Andrea ; Montanari, Gian ; Jian Li

  • Author_Institution
    State Key Lab. of Power Transm. Equip. & Syst. Security & New Technol., Chongqing Univ., Chongqing, China
  • fYear
    2012
  • fDate
    17-20 Sept. 2012
  • Firstpage
    459
  • Lastpage
    463
  • Abstract
    This paper presents partial discharge (PD) activity in line commutated high voltage direct current (HVDC) converter. Poorly impregnated kraft paper sheet was designed to simulate the field cavity defect and generate PD signals, which were detected by a Rogowski coil sensor in experiments. The dependence of partial discharge inception voltage (PDIV) on the characteristics of the applied waveform, that is, a sinusoidal voltage affected by notches due to commutations was reported. The experiments show that the PDIV under notched voltages becomes larger increasing the firing and overlap angles. Also, the characteristics of PD activity and pattern under the AC notched voltages were carried out. The results show that the PDs occur more intensively in the presence of voltage notches. Thus, it is expected that the lifetime of paper-oil insulation under AC notched voltage could be shorter than that under pure AC sinusoidal voltage.
  • Keywords
    HVDC power convertors; coils; commutation; insulating oils; paper; partial discharges; signal detection; waveform generators; AC notched voltage; PD signal detection; PDIV; Rogowski coil sensor; field cavity defect; high voltage direct current; impregnated kraft paper sheet; line commutated HVDC converter; paper oil insulation; partial discharge inception voltage; sinusoidal voltage; Educational institutions; Firing; HVDC transmission; Insulation; Partial discharges; Power transformer insulation; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Voltage Engineering and Application (ICHVE), 2012 International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4673-4747-1
  • Type

    conf

  • DOI
    10.1109/ICHVE.2012.6357032
  • Filename
    6357032