• DocumentCode
    577874
  • Title

    Low-power monolithic COMB laser for short-reach WDM optical interconnects

  • Author

    Gubenko, A. ; Mikhrin, S. ; Mikhrin, V. ; Krestnikov, I. ; Livshits, D.

  • Author_Institution
    Innolume GmbH, Dortmund, Germany
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    62
  • Lastpage
    63
  • Abstract
    16+ low-noise optical comb lines with 80 GHz spacing and 0 dBm/line output power are generated by a single InAs/GaAs quantum dot (QD) Fabry-Perot laser. Electrical power consumption is reduced dramatically down to 6 mW/line.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser noise; optical communication equipment; optical interconnections; power consumption; quantum dot lasers; wavelength division multiplexing; InAs-GaAs; electrical power consumption; frequency 80 GHz; laser output power; low-noise optical comb lines; low-power monolithic COMB laser; short-reach WDM optical interconnects; single quantum dot Fabry-Perot laser; Gallium arsenide; Laser modes; Optical interconnections; Power demand; Pump lasers; Quantum dot lasers; Wavelength division multiplexing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358489
  • Filename
    6358489