Title :
Planar InAs photodiodes fabricated using He ion implantation
Author :
Sandall, Ian ; Tan, Chee Hing ; Smith, Andrew ; Gwilliam, Russell
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
This work has shown that it is possible to use He implantation with InAs to produce highly resistive areas and that when combined with post implantation annealing, a sufficiently high resistive region can be formed to allow the fabrication of a planar photodiode.
Keywords :
helium; indium compounds; ion implantation; photodiodes; He; InAs; ion implantation; photodiodes; resistive region; Annealing; Conductivity; Helium; Ion implantation; P-i-n diodes; Photodiodes; Temperature measurement;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358542
