Title :
Short SiGe HBT electro-absorption modulator
Author :
Wu, Pengfei ; Deng, Shengling ; Huang, Z. Rena
Author_Institution :
Electr., Comput., & Syst. Eng. Dept., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A SiGe HBT electro-absorption modulator with a device length of 69 μm is proposed. Calculations show that the modulator works at a speed of 25 GHz and can achieve a 10 dB extinction ratio.
Keywords :
Ge-Si alloys; electro-optical modulation; electroabsorption; heterojunction bipolar transistors; optical interconnections; HBT electroabsorption modulator; SiGe; extinction ratio; frequency 25 GHz; heterojunction bipolar transistors; optical interconnections; size 69 mum; Electrooptic modulators; Heterojunction bipolar transistors; Optical switches; Silicon; Silicon germanium; Electro-absorption modulator; SiGe HBT; optical interconnections;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358602
