Title :
Integrated 180 nm CMOS phototransistors with an optimized responsivity-bandwidth-product
Author :
Kostov, Plamen ; Gaberl, Wolfgang ; Hofbauer, Michael ; Zimmermann, Horst
Author_Institution :
Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
Abstract :
A phototransistor with an optimized responsivity-band-width-product is presented in this paper. The device has a size of 40×40 μm2 and is implemented in a standard 180 nm CMOS process. By means of a thick low doped p-epitaxial layer starting material (collector), a base formed as striped n-wells and an optimized design of the emitter high responsivity-bandwidth-product values up to 171.1 A/W*MHz are achieved.
Keywords :
CMOS integrated circuits; integrated optoelectronics; optimisation; phototransistors; integrated CMOS phototransistors; optimized design; optimized responsivity-bandwidth-product; size 180 nm; striped n-wells; thick low doped p-epitaxial layer starting material; Bandwidth; CMOS integrated circuits; CMOS process; Phototransistors; Silicon; Standards; CMOS; Light Detector; Phototransistor;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358618
