DocumentCode :
577969
Title :
FDTD modeling of InGaN-based light-emitting diodes with microsphere arrays
Author :
Zhu, Peifen ; Zhang, Jing ; Liu, Guangyu ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear :
2012
fDate :
23-27 Sept. 2012
Firstpage :
433
Lastpage :
434
Abstract :
The light extraction efficiency of InGaN light-emitting diodes employing microsphere arrays with different refractive indices and diameters were studied, and the use of anatase TiO2 microsphere arrays resulted in 2.4-times increase in light extraction efficiency.
Keywords :
III-V semiconductors; finite difference time-domain analysis; gallium compounds; indium compounds; light emitting diodes; refractive index; titanium compounds; wide band gap semiconductors; FDTD modeling; InGaN; TiO2; anatase microsphere arrays; finite difference time-domain analysis; light emitting diodes; light extraction efficiency; refractive index; Finite difference methods; Gallium nitride; Lenses; Light emitting diodes; Microoptics; Power generation; Refractive index;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
Type :
conf
DOI :
10.1109/IPCon.2012.6358678
Filename :
6358678
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=577969
بازگشت