• DocumentCode
    577969
  • Title

    FDTD modeling of InGaN-based light-emitting diodes with microsphere arrays

  • Author

    Zhu, Peifen ; Zhang, Jing ; Liu, Guangyu ; Tansu, Nelson

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    433
  • Lastpage
    434
  • Abstract
    The light extraction efficiency of InGaN light-emitting diodes employing microsphere arrays with different refractive indices and diameters were studied, and the use of anatase TiO2 microsphere arrays resulted in 2.4-times increase in light extraction efficiency.
  • Keywords
    III-V semiconductors; finite difference time-domain analysis; gallium compounds; indium compounds; light emitting diodes; refractive index; titanium compounds; wide band gap semiconductors; FDTD modeling; InGaN; TiO2; anatase microsphere arrays; finite difference time-domain analysis; light emitting diodes; light extraction efficiency; refractive index; Finite difference methods; Gallium nitride; Lenses; Light emitting diodes; Microoptics; Power generation; Refractive index;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358678
  • Filename
    6358678
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=577969