Title :
Integrated differential pressure sensor in silicon-on-insulator
Author :
Hallynck, Elewout ; Bienstman, Peter
Author_Institution :
Dept. of Inf. Technol. (INTEC), Photonics Res. Group, Ghent Univ., Ghent, Belgium
Abstract :
We have fabricated and characterized a compact integrated optical pressure sensor in silicon-on-insulator. Measurements have shown that spectral features in our device can shift up to 1585 pm going from -20 to 80 kPa.
Keywords :
elemental semiconductors; integrated optics; optical fabrication; pressure sensors; silicon; integrated differential pressure sensor; optical fabrication; pressure -20 kPa to 80 kPa; silicon-on-insulator; spectral properties; Hafnium; Optical device fabrication; Optical interferometry; Optical sensors; Silicon; Silicon compounds; Silicon on insulator technology;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358684
