Title :
95°C CW operation of InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser with ultra-low threshold current
Author :
Sato, T. ; Takeda, K. ; Shinya, A. ; Nozaki, K. ; Taniyama, H. ; Kobayashi, W. ; Hasebe, K. ; Kakitsuka, T. ; Notomi, M. ; Matsuo, S.
Author_Institution :
NTT Photonics Labs., Atsugi, Japan
Abstract :
An electrically driven photonic-crystal nanocavity laser with a buried heterostructure exhibits a record low threshold current of 14 μA at 25°C. High-temperature operation up to 95°C is achieved by using the InGaAlAs-based multiple-quantum-well active region.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser cavity resonators; nanophotonics; photonic crystals; quantum well lasers; InGaAlAs; buried heterostructure; continuous wave operation; current 14 muA; multiple quantum well active region; multiple quantum well photonic crystal nanocavity laser; temperature 25 C; temperature 95 C; ultralow threshold current; Fiber lasers; Indium phosphide; Photonics; Quantum well devices; Threshold current; Waveguide lasers;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358692
