Title :
Gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates
Author :
Zhang, Jing ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Optical gain properties of InGaN quantum wells on ternary substrates are analyzed for visible lasers. Larger optical gains are obtained by employing ternary substrates, which indicate its potential for green-emitting diode lasers.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; InGaN; green-emitting diode lasers; laser characteristics; optical gain properties; quantum wells; ternary InGaN substrates; visible lasers; Charge carrier density; Gallium nitride; Optical polarization; Piezoelectric polarization; Semiconductor lasers; Substrates;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358766
