Cavity design of nanomembrane MR-VCSELs on silicon

Author

Zhao, Deyin ; Yang, Hongjun ; Seo, Jung-Hun ; Ma, Zhenqiang ; Zhou, Weidong

Author_Institution

Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX, USA

fYear

2012

fDate

23-27 Sept. 2012

Firstpage

868

Lastpage

869

Abstract

The authors report an optically pumped Si membrane reflector vertical cavity surface emitting laser (MR-VCSEL), which was built with PDMS nanomembrane transfer printing processes. The lasing cavity consists of a reflection transferred III-V InGaAsP quantum well (QW) heterostructure active region, sandwiched in between two single-layer Si photonic crystal Fano resonance membrane reflectors.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; laser accessories; laser cavity resonators; nanophotonics; optical pumping; photonic crystals; printing; quantum well lasers; silicon; surface emitting lasers; InGaAsP; PDMS nanomembrane; Si; cavity design; lasing cavity; nanomembrane MR-VCSEL; optically pumped membrane reflector; photonic crystal Fano resonance membrane reflector; reflection transferred quantum well heterostructure active region; transfer printing processes; vertical cavity surface emitting laser; Cavity resonators; Indexes; Indium phosphide; Reflection; Silicon; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Conference (IPC), 2012 IEEE

Conference_Location

Burlingame, CA

Print_ISBN

978-1-4577-0731-5

Type

conf

DOI

10.1109/IPCon.2012.6359269

Filename

6359269