Title :
Cavity design of nanomembrane MR-VCSELs on silicon
Author :
Zhao, Deyin ; Yang, Hongjun ; Seo, Jung-Hun ; Ma, Zhenqiang ; Zhou, Weidong
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX, USA
Abstract :
The authors report an optically pumped Si membrane reflector vertical cavity surface emitting laser (MR-VCSEL), which was built with PDMS nanomembrane transfer printing processes. The lasing cavity consists of a reflection transferred III-V InGaAsP quantum well (QW) heterostructure active region, sandwiched in between two single-layer Si photonic crystal Fano resonance membrane reflectors.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; laser accessories; laser cavity resonators; nanophotonics; optical pumping; photonic crystals; printing; quantum well lasers; silicon; surface emitting lasers; InGaAsP; PDMS nanomembrane; Si; cavity design; lasing cavity; nanomembrane MR-VCSEL; optically pumped membrane reflector; photonic crystal Fano resonance membrane reflector; reflection transferred quantum well heterostructure active region; transfer printing processes; vertical cavity surface emitting laser; Cavity resonators; Indexes; Indium phosphide; Reflection; Silicon; Vertical cavity surface emitting lasers;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6359269
