• DocumentCode
    578292
  • Title

    InAs/GaAs quantum-dot lasers monolithically grown on Si substrate

  • Author

    Liu, Huiyun ; Lee, Andrew ; Jiang, Qi ; Seeds, Alwyn

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    882
  • Lastpage
    883
  • Abstract
    We present the studies on the development of InAs/GaAs quantum-dot lasers monolithically grown on Si for Si photonics. Room-temperature lasing near 1.3 μm has been demonstrated for the devices on Si and Ge substrates.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; indium compounds; nanophotonics; quantum dot lasers; silicon; Ge; Ge substrates; InAs-GaAs; InAs/GaAs quantum-dot lasers; Si; Si photonics; Si substrate; monolithic growth; room-temperature lasing; Gallium arsenide; Photonics; Quantum dot lasers; Silicon; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6359276
  • Filename
    6359276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=578292