• DocumentCode
    578293
  • Title

    Development of lattice-matched GaPN/AlGaPN DBR on Si

  • Author

    Okada, H. ; Kumagai, K. ; Kawai, T. ; Sekiguchi, H. ; Wakahara, A.

  • Author_Institution
    Electron.-Inspired Interdiscipl. Res. Inst. (EIIRIS), Toyohashi Univ. of Technol., Toyohashi, Japan
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    887
  • Lastpage
    888
  • Abstract
    In this study, development of GaPN/AlGaPN heterostructures by solid source MBE for realization of distributed Bragg reflector (DBR) for optical device on Si was investigated.
  • Keywords
    III-V semiconductors; distributed Bragg reflectors; gallium compounds; molecular beam epitaxial growth; phosphorus compounds; silicon; wide band gap semiconductors; GaPN-AlGaPN; Si; lattice matched distributed Bragg reflector; solid source molecular beam epitaxy; Atom optics; Distributed Bragg reflectors; Optical device fabrication; Optical reflection; Optical surface waves; Reflectivity; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6359279
  • Filename
    6359279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=578293