Title :
Development of lattice-matched GaPN/AlGaPN DBR on Si
Author :
Okada, H. ; Kumagai, K. ; Kawai, T. ; Sekiguchi, H. ; Wakahara, A.
Author_Institution :
Electron.-Inspired Interdiscipl. Res. Inst. (EIIRIS), Toyohashi Univ. of Technol., Toyohashi, Japan
Abstract :
In this study, development of GaPN/AlGaPN heterostructures by solid source MBE for realization of distributed Bragg reflector (DBR) for optical device on Si was investigated.
Keywords :
III-V semiconductors; distributed Bragg reflectors; gallium compounds; molecular beam epitaxial growth; phosphorus compounds; silicon; wide band gap semiconductors; GaPN-AlGaPN; Si; lattice matched distributed Bragg reflector; solid source molecular beam epitaxy; Atom optics; Distributed Bragg reflectors; Optical device fabrication; Optical reflection; Optical surface waves; Reflectivity; Silicon;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6359279
