Title :
A compact noise model for carbon nanotube FETs
Author :
Landauer, Gerhard Martin ; González, José Luis
Author_Institution :
Dept. d´´Eng. Electron., Univ. Politec. de Catalunya, Barcelona, Spain
Abstract :
This paper focuses on the development of a compact noise model for radiofrequency (RF) carbon nanotube field-effect transistors (CNFET). The noise mechanisms in these devices are discussed and the impact of the different noise sources is analyzed. For the RF-CNFET under investigation a minimum noise figure NFmin = 0.104 dB at 60 GHz is predicted. Our model is usable with conventional circuit simulators, which provides a basis for further investigations on CNFET-based RF building blocks.
Keywords :
carbon nanotube field effect transistors; CNFET-based RF building block; RF carbon nanotube field-effect transistor; compact noise model; frequency 60 GHz; noise figure; noise mechanism; radiofrequency CNFET; Analytical models; CNTFETs; Logic gates; Nickel; Noise measurement; Predictive models; Semiconductor device modeling; Carbon nanotube; analog; field-effect transistor; noise modeling; radiofrequency;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-1717-7
DOI :
10.1109/ISCDG.2012.6359993
