SPICE modelling of precessional spin-transfer switching in MRAM cells with a perpendicular polarizer

The development of hybrid Magnetic-CMOS circuits such as MRAM (Magnetic RAM) and Magnetic logic circuit requires efficient simulation models to describe the magnetic devices electrical behavior. A compact-model of Magnetic Tunnel Junctions (MTJ) is presented in this paper. This device is the most commonly used magnetic components in CMOS circuits. This model is based on Spin-Transfer Torque (STT) with a perpendicular polarizer writing approach. The current-induced magnetic switching and excitations was studied in structures comprising a perpendicularly magnetized polarizing layer (PL), an in-plane magnetized free layer (FL), and an in-plane magnetized analyzing layer (AL).