Investigation of x-ray damage effects on 4T CMOS image sensors

Author

Tan, J. ; Theuwissen, A.J.P.

Author_Institution

Electron. Instrum. Lab., Delft Univ. of Technol., Delft, Netherlands

fYear

2012

fDate

24-26 Sept. 2012

Firstpage

131

Lastpage

134

Abstract

This paper presents a study on the radiation-induced trapped charges and the pixel parameter degradation of a 4T CMOS image sensor through the pixel bias voltage technique and trap-annealing. The bias voltage during the radiation has an effect on the yield of oxide trapped charges. The post-radiation shallow trapped charges can be quickly annealed at room temperature. The pixel dark random noise is recovered by annealing the positive trapped charges, while a subsequent annealing causes the pixel noise to rebound by means of the interface traps.

Keywords

CMOS image sensors; X-ray effects; annealing; interface states; random noise; CMOS image sensor; X-ray damage effect; interface trap; pixel bias voltage technique; pixel dark random noise; pixel parameter degradation; post radiation shallow trapped charge; radiation induced trapped charge; trap annealing; Annealing; Degradation; Energy measurement; Logic gates; Noise; Reliability; Voltage measurement; CMOS image sensor; annealing; dark random noise; pixel bias; radiation; trapped charges;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International

Conference_Location

Grenoble

Print_ISBN

978-1-4673-1717-7

Type

conf

DOI

10.1109/ISCDG.2012.6360038

Filename

6360038