DocumentCode
578508
Title
Impact of effective capacitance area on the characterization of SOI Wafers by Split-C(V) in Pseudo-MOSFET configuration
Author
Fernandez, Camino ; Diab, A. ; Rodriguez, N. ; Ohata, A. ; Allibert, F. ; Ionica, Irina ; Gamiz, F. ; Cristoloveanu, S.
Author_Institution
Nanoelectron. Res. Group, Univ. of Granada, Granada, Spain
fYear
2012
fDate
24-26 Sept. 2012
Firstpage
123
Lastpage
126
Abstract
The Pseudo-MOSFET is a very successful characterization technique which can be further enriched by adopting split-C(V) measurements for mobility evaluation. In this work, we investigate the impact of the effective surface on the accurate evaluation of gate-to-channel capacitance in Pseudo-MOSFETs. The surprising dependence of the effective area on the AC signal frequency has been analyzed and modelled for a configuration with an arbitrary number of needles.
Keywords
MOSFET; capacitance; semiconductor device measurement; silicon-on-insulator; AC signal frequency; SOI wafer; capacitance area; gate-to-channel capacitance; mobility evaluation; pseudoMOSFET configuration; split-C(V) measurement; Capacitance; Logic gates; Needles;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location
Grenoble
Print_ISBN
978-1-4673-1717-7
Type
conf
DOI
10.1109/ISCDG.2012.6360040
Filename
6360040
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