DocumentCode
57922
Title
Systematic Root Cause Analysis for GaP Green Light LED Degradation
Author
Cher Ming Tan ; Chao Sung Lai
Author_Institution
Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
Volume
13
Issue
1
fYear
2013
fDate
Mar-13
Firstpage
156
Lastpage
160
Abstract
High-brightness light-emitting diodes (LEDs) are now commonly employed in many applications. In order to ensure long-term applications with insignificant degradation, the root cause analysis of their degradation is important. While failure analysis of failed LEDs can usually be traced with observable defects, the defects that cause LEDs to degrade are generally less obvious. In this paper, we present a systematic method to identify the root cause of green GaP LED degradation. The various steps in the procedure from nondestructive to destructive analysis are described, and the root cause is found to be the excessive doping of zinc in the p-layer.
Keywords
doping; failure analysis; gallium compounds; light emitting diodes; nondestructive testing; GaP; failure analysis; green light LED degradation; high-brightness light-emitting diode; nondestructive analysis; p-layer; systematic root cause analysis; zinc excessive doping; Aging; Degradation; Educational institutions; Junctions; Light emitting diodes; Reliability; Zinc; Green LED; SIMS analysis; red light emission; zinc overdoping; zinc oxide formation;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2012.2225106
Filename
6332492
Link To Document