• DocumentCode
    57922
  • Title

    Systematic Root Cause Analysis for GaP Green Light LED Degradation

  • Author

    Cher Ming Tan ; Chao Sung Lai

  • Author_Institution
    Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    13
  • Issue
    1
  • fYear
    2013
  • fDate
    Mar-13
  • Firstpage
    156
  • Lastpage
    160
  • Abstract
    High-brightness light-emitting diodes (LEDs) are now commonly employed in many applications. In order to ensure long-term applications with insignificant degradation, the root cause analysis of their degradation is important. While failure analysis of failed LEDs can usually be traced with observable defects, the defects that cause LEDs to degrade are generally less obvious. In this paper, we present a systematic method to identify the root cause of green GaP LED degradation. The various steps in the procedure from nondestructive to destructive analysis are described, and the root cause is found to be the excessive doping of zinc in the p-layer.
  • Keywords
    doping; failure analysis; gallium compounds; light emitting diodes; nondestructive testing; GaP; failure analysis; green light LED degradation; high-brightness light-emitting diode; nondestructive analysis; p-layer; systematic root cause analysis; zinc excessive doping; Aging; Degradation; Educational institutions; Junctions; Light emitting diodes; Reliability; Zinc; Green LED; SIMS analysis; red light emission; zinc overdoping; zinc oxide formation;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2012.2225106
  • Filename
    6332492