DocumentCode :
57922
Title :
Systematic Root Cause Analysis for GaP Green Light LED Degradation
Author :
Cher Ming Tan ; Chao Sung Lai
Author_Institution :
Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
Volume :
13
Issue :
1
fYear :
2013
fDate :
Mar-13
Firstpage :
156
Lastpage :
160
Abstract :
High-brightness light-emitting diodes (LEDs) are now commonly employed in many applications. In order to ensure long-term applications with insignificant degradation, the root cause analysis of their degradation is important. While failure analysis of failed LEDs can usually be traced with observable defects, the defects that cause LEDs to degrade are generally less obvious. In this paper, we present a systematic method to identify the root cause of green GaP LED degradation. The various steps in the procedure from nondestructive to destructive analysis are described, and the root cause is found to be the excessive doping of zinc in the p-layer.
Keywords :
doping; failure analysis; gallium compounds; light emitting diodes; nondestructive testing; GaP; failure analysis; green light LED degradation; high-brightness light-emitting diode; nondestructive analysis; p-layer; systematic root cause analysis; zinc excessive doping; Aging; Degradation; Educational institutions; Junctions; Light emitting diodes; Reliability; Zinc; Green LED; SIMS analysis; red light emission; zinc overdoping; zinc oxide formation;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2012.2225106
Filename :
6332492
Link To Document :
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