Title :
Ultra wideband cascaded low noise amplifier implemented in 100-nm GaAs metamorphic-HEMT technology
Author :
Dyskin, Aleksey ; Ritter, Dan ; Kallfass, Ingmar
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Abstract :
We present a state-of-the-art broadband (60 to 90 GHz, 40%) 4-stage low noise amplifier (LNA) in a GaAs metamorphic high electron mobility transistor (mHEMT) technology. The LNA, spanning several waveguide bands, is dedicated to radiometry, communication and instrumentation applications. It consumes 56 mW and exhibits a gain of more than 19 dB with flat frequency response and average noise figure of 2.5 dB. The design makes use of reactive feedback by source degeneration. Broadband matching was achieved by using enhanced L-C matching networks. Gate width was optimized for best noise figure and gain performance.
Keywords :
gallium arsenide; high electron mobility transistors; low noise amplifiers; millimetre wave amplifiers; millimetre wave transistors; GaAs; LNA; communication applications; enhanced L-C matching networks; frequency 60 GHz to 90 GHz; instrumentation applications; metamorphic high electron mobility transistor technology; metamorphic-HEMT technology; noise figure 2.5 dB; radiometry applications; size 100 nm; state-of-the-art broadband 4-stage low noise amplifier; ultrawideband cascaded low noise amplifier; Broadband amplifiers; Gain; Gallium arsenide; Noise figure; mHEMTs; Broadband LNA; E-Band; GaAs mHEMT; V-Band; W-Band; inductive degeneration;
Conference_Titel :
Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on
Conference_Location :
Potsdam
Print_ISBN :
978-1-4673-4454-8
Electronic_ISBN :
2161-0819
DOI :
10.1109/ISSSE.2012.6374348
