Title :
UV Photodetector of a Homojunction Based On p-Type Sb-Doped ZnO Nanoparticles and n-Type ZnO Nanowires
Author :
Cheng-Liang Hsu ; Kuan-Chao Chen ; Ting-Jen Hsueh
Author_Institution :
Dept. of Electron. Eng., Nat. Univ. of Tainan, Tainan, Taiwan
Abstract :
The highly dense n-type zinc oxide (ZnO) nanowires (NWs)/p-type ZnO:Sb nanoparticles (NPs) growth on glass substrate. An energy dispersive X-ray mapping demonstrates that Sb element is present in the nanostructures (NSs) and the doping Sb concentration is 1.52 atomic%. The XRD spectrum reveals ZnO wurtzite and Sb2O3 cubic structures. Additionally, the PL spectrum of the ZnO:Sb sample includes strong peaks at approximately 390 and 521 nm. HRTEM images indicate that p-ZnO:Sb NPs and n-ZnO NWs are polycrystalline and single crystalline structures, respectively. The I-V curve reveals that the measured currents in the ZnO NWs to ZnO:Sb NSs were increased by a factor of ~13 at 5 V. The UV-to-visible rejection ratio of the ZnO:Sb sample was ~3.19 at 5 V. The maximum quantum efficiency of the ZnO:Sb sample was approximately 46.5% when the incident light was 390 nm. Furthermore, the dynamic response of the ZnO:Sb sample UV photodetector was stable and reproducible. The measured current under UV light exceeded the dark current by around 11 μA.
Keywords :
II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; antimony; nanoparticles; nanowires; photodetectors; photoluminescence; ultraviolet detectors; zinc compounds; HRTEM image; UV photodetector; ZnO; ZnO:Sb; energy dispersive X-ray mapping; n-type nanowires; p-type nanoparticles; photoluminescence spectra; voltage 5 V; wavelength 390 nm; Current measurement; Impurities; Photodetectors; Temperature measurement; X-ray scattering; Zinc oxide; Homojunction; Sb-doped zinc oxide (ZnO); UV detector; UV detector.; nanoparticles (NPs); nanowires (NWs);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2312253