Proton-Induced Degradation of InP/InGaAs HBTs Predicted by Nonionizing Energy Loss Model

Author

Li, C.H. ; Lu, H.L. ; Zhang, Y.M. ; Liu, M. ; Zhao, X.H.

Author_Institution

Key Lab. of Wide Band-Gap Semicond. Mater. & Devices of China, Xidian Univ., Xi´an, China

Volume

62

Issue

3

fYear

2015

fDate

Jun-15

Firstpage

1336

Lastpage

1340

Abstract

The proton-induced degradation for InP/InGaAs heterojunction bipolar transistors (HBTs) is studied based on the calculation in the energy range from the displacement damage threshold to 100 MeV with analytical model of nonionizing energy loss (NIEL). The experiments of 3 and 10 MeV proton radiation on InP/InGaAs HBTs have been performed, in which significant current gain degradation is predominant. The increase in base current due to the increased recombination is responsible for the noticeable current gain degradation. Qualitative comparison of the NIEL results with the proton damage coefficients for InP/InGaAs HBTs is made and good correlation is found.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; radiation hardening (electronics); semiconductor device models; HBT; InP-InGaAs; NIEL; electron volt energy 10 MeV; electron volt energy 100 MeV; electron volt energy 3 MeV; heterojunction bipolar transistor; nonionizing energy loss model; noticeable current gain degradation; proton radiation; proton-induced degradation; Degradation; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Junctions; Protons; Radiation effects; Gain degradation; InP/InGaAs; heterojunction bipolar transistor; nonionizing energy loss; proton radiation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2015.2416729

Filename

7104180