• DocumentCode
    581015
  • Title

    Ultra high density logic designs using transistor-level monolithic 3D integration

  • Author

    Lee, Young-Joon ; Morrow, Patrick ; Lim, Sung Kyu

  • Author_Institution
    Sch. of ECE, Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2012
  • fDate
    5-8 Nov. 2012
  • Firstpage
    539
  • Lastpage
    546
  • Abstract
    Recent innovations in monolithic 3D technology enable much higher-density vertical connections than today´s through-silicon-via (TSV)-based technology. In this paper, we investigate the benefits and challenges of monolithic 3D integration technology for ultra high-density logic designs. Based on our layout experiments, we compare important design metrics such as area, wirelength, timing, and power consumption of monolithic 3D designs with the traditional 2D designs. We also explore various interconnect options for monolithic 3D ICs that improve design density and quality. Depending on the interconnect settings of monolithic 3D ICs and the benchmark circuit characteristics, we observe that our two-tier monolithic 3D design provides up to 40% reduced footprint, 27.7% shorter wirelength, 39.7% faster operation, and 9.7% lower power consumption over the 2D counterpart.
  • Keywords
    integrated circuit layout; logic design; three-dimensional integrated circuits; higher density vertical connections; layout experiment; monolithic 3D integration technology; transistor level monolithic 3D integration; ultrahigh density logic design; Integrated circuit interconnections; Layout; Libraries; Metals; Routing; Standards; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2012 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Type

    conf

  • Filename
    6386723