DocumentCode
581015
Title
Ultra high density logic designs using transistor-level monolithic 3D integration
Author
Lee, Young-Joon ; Morrow, Patrick ; Lim, Sung Kyu
Author_Institution
Sch. of ECE, Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2012
fDate
5-8 Nov. 2012
Firstpage
539
Lastpage
546
Abstract
Recent innovations in monolithic 3D technology enable much higher-density vertical connections than today´s through-silicon-via (TSV)-based technology. In this paper, we investigate the benefits and challenges of monolithic 3D integration technology for ultra high-density logic designs. Based on our layout experiments, we compare important design metrics such as area, wirelength, timing, and power consumption of monolithic 3D designs with the traditional 2D designs. We also explore various interconnect options for monolithic 3D ICs that improve design density and quality. Depending on the interconnect settings of monolithic 3D ICs and the benchmark circuit characteristics, we observe that our two-tier monolithic 3D design provides up to 40% reduced footprint, 27.7% shorter wirelength, 39.7% faster operation, and 9.7% lower power consumption over the 2D counterpart.
Keywords
integrated circuit layout; logic design; three-dimensional integrated circuits; higher density vertical connections; layout experiment; monolithic 3D integration technology; transistor level monolithic 3D integration; ultrahigh density logic design; Integrated circuit interconnections; Layout; Libraries; Metals; Routing; Standards; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design (ICCAD), 2012 IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Type
conf
Filename
6386723
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