• DocumentCode
    581036
  • Title

    Power grid effects and their impact on-die

  • Author

    Chiprout, Eli

  • Author_Institution
    Strategic CAD labs, Intel Corp.
  • fYear
    2012
  • fDate
    5-8 Nov. 2012
  • Firstpage
    667
  • Lastpage
    669
  • Abstract
    This paper is intended to give a brief tutorial understanding of on-die power grid effects. Board, package and on-die power grids deliver power to a die having both global (full-die) as well as local (intra-die) transient effects. With a simple excitation model and a detailed die/package/board model, one can come to understand the dynamic effects occurring inside the die in terms of global and local voltage droop scenarios. These effects have been confirmed by measurements on-die. However, a simple excitation model is usually not representative of the worst-case transient scenarios causing the largest voltage droop. Any chip, especially a microprocessor, contains so many potential state transitions that it is not possible to simulate or enumerate all of them. A spectral-based learning and optimization method can alleviate this problem pre-silicon, while a micro-architectural based test generation scheme can help alleviate the problem post silicon.
  • Keywords
    integrated circuit design; integrated circuit packaging; power supply circuits; transients; die-package-board model; full die transient effect; global transient effect; intradie transient effect; local transient effect; on-die power grid effect; optimization method; spectral based learning method; state transition; voltage droop; Capacitance; Capacitors; Design automation; Metals; Power grids; Power system dynamics; Resonant frequency; Power grid; on-die; voltage droop;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2012 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Type

    conf

  • Filename
    6386744