Title :
ZnO crystalline nanowires array for application in gas ionization sensor
Author :
Spitsina, Svetlana ; Kahrizi, Mojtaba
Author_Institution :
Electr. & Comput. Eng., Concordia Univ., Montreal, QC, Canada
Abstract :
The air monitoring becomes daily necessity not only in industrial environment and in aerospace applications but also in a living milieu as a consequence of the gas pollution. For detection of gaseous pollutants gas sensors are employed. In this work the successful p-type and n-type ZnO nanowires (NWs) were accomplished during electrochemical deposition. P-type ZnO NWs doped with Ag dopant were achieved with omitted post annealing procedure. Also, the novel gas ionization sensor (GIS) with integrated p-type ZnO NWs as the anode is proposed. P-type ZnO NWs-based gas sensor´s characteristics compared with the gold NWs-based GIS, which was developed and reported by our group previously. It showed the comparable breakdown voltages in inert gas (Ar) atmosphere. P-type ZnO NWs-based GIS demonstrated good repeatability. The practical and low cost p-type ZnO NWs-based gas sensor presented in this article shows potential for future implementation in real world gas sensors´ applications.
Keywords :
II-VI semiconductors; gas sensors; ionisation; nanosensors; nanowires; wide band gap semiconductors; zinc compounds; ZnO; aerospace applications; air monitoring; breakdown voltages; crystalline nanowire array; electrochemical deposition; gas ionization sensor; gas pollution; gaseous pollutant gas sensor detection; industrial environment; inert gas atmosphere; integrated p-type NW gas sensor; integrated p-type nanowire gas sensor; living milieu; low cost p-type NW-based gas sensor; n-type NW gas sensor; omitted post annealing procedure; p-type NW-based GIS; Argon; Artificial intelligence; Conductivity; Optics; Substrates; Zinc oxide;
Conference_Titel :
IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-2419-9
Electronic_ISBN :
1553-572X
DOI :
10.1109/IECON.2012.6389251