• DocumentCode
    581354
  • Title

    ZnO crystalline nanowires array for application in gas ionization sensor

  • Author

    Spitsina, Svetlana ; Kahrizi, Mojtaba

  • Author_Institution
    Electr. & Comput. Eng., Concordia Univ., Montreal, QC, Canada
  • fYear
    2012
  • fDate
    25-28 Oct. 2012
  • Firstpage
    3997
  • Lastpage
    4002
  • Abstract
    The air monitoring becomes daily necessity not only in industrial environment and in aerospace applications but also in a living milieu as a consequence of the gas pollution. For detection of gaseous pollutants gas sensors are employed. In this work the successful p-type and n-type ZnO nanowires (NWs) were accomplished during electrochemical deposition. P-type ZnO NWs doped with Ag dopant were achieved with omitted post annealing procedure. Also, the novel gas ionization sensor (GIS) with integrated p-type ZnO NWs as the anode is proposed. P-type ZnO NWs-based gas sensor´s characteristics compared with the gold NWs-based GIS, which was developed and reported by our group previously. It showed the comparable breakdown voltages in inert gas (Ar) atmosphere. P-type ZnO NWs-based GIS demonstrated good repeatability. The practical and low cost p-type ZnO NWs-based gas sensor presented in this article shows potential for future implementation in real world gas sensors´ applications.
  • Keywords
    II-VI semiconductors; gas sensors; ionisation; nanosensors; nanowires; wide band gap semiconductors; zinc compounds; ZnO; aerospace applications; air monitoring; breakdown voltages; crystalline nanowire array; electrochemical deposition; gas ionization sensor; gas pollution; gaseous pollutant gas sensor detection; industrial environment; inert gas atmosphere; integrated p-type NW gas sensor; integrated p-type nanowire gas sensor; living milieu; low cost p-type NW-based gas sensor; n-type NW gas sensor; omitted post annealing procedure; p-type NW-based GIS; Argon; Artificial intelligence; Conductivity; Optics; Substrates; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society
  • Conference_Location
    Montreal, QC
  • ISSN
    1553-572X
  • Print_ISBN
    978-1-4673-2419-9
  • Electronic_ISBN
    1553-572X
  • Type

    conf

  • DOI
    10.1109/IECON.2012.6389251
  • Filename
    6389251