Title :
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes
Author :
Abbate, C. ; Busatto, G. ; Cova, P. ; Delmonte, N. ; Giuliani, F. ; Iannuzzo, F. ; Sanseverino, A. ; Velardi, F.
Author_Institution :
DIEI, Univ. degli Studi di Cassino e del Lazio Meridionale, Cassino, Italy
Abstract :
A study is presented aimed at describing phenomena involved in Single Event Burnout induced by heavy ion irradiation in SiC Schottky diodes. On the basis of experimental data obtained for 79Br irradiation at different energies, electro-thermal FEM is used to demonstrate that the failure is caused by a strong local increase of the semiconductor temperature. With respect to previous studies the temperature dependent thermal material properties were added. The critical ion energy calculated by this model is in agreement with literature experimental results. The substrate doping dependence of the SEE robustness was analyzed, proving the effectiveness of the developed model for device technological improvements.
Keywords :
Schottky diodes; failure analysis; finite element analysis; ion beam effects; semiconductor device models; semiconductor doping; silicon compounds; wide band gap semiconductors; 79Br irradiation; SEE robustness; Schottky diodes; SiC; critical ion energy; electrothermal FEM; failure analysis; heavy ion irradiation-induced thermal damage; semiconductor temperature; single event burnout; substrate doping; thermal material properties; Computational modeling; Current density; Density measurement; Power system measurements; Radiation effects; Schottky diodes; Silicon carbide; Radiation effects; Schottky diodes; silicon carbide;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2387014
