DocumentCode :
5824
Title :
RB-Explorer: An Accurate and Practical Approach to Write Amplification Measurement for SSDs
Author :
Hui Sun ; Xiao Qin ; Hong Jiang ; Jianzhong Huang ; Changsheng Xie
Author_Institution :
Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
Volume :
64
Issue :
4
fYear :
2015
fDate :
Apr-15
Firstpage :
1133
Lastpage :
1148
Abstract :
A large write amplification ratio degrades the program/erase cycles (P/Es) of NAND Flashes and reduces the endurance and performance of solid state disks (SSDs). The lack of a practical way to measure write amplification for SSDs motivates us to propose a novel measuring method called RB-Explorer at the SSD level rather than the NAND Flash level. The goal of RB-Explorer is two-fold: (1) to accurately measure the write amplification of SSDs to quantify SSD endurance and (2) to study the impacts of I/O techniques on write amplification of SSDs. RB-Explorer incorporates a Ready/Busy (R/B) signal of one of the NAND Flashes in an SSD in a proposed write amplification model for SSDs with four full-parallelism levels (i.e., the channel, chip, die, and plane levels). RBExplorer takes two steps toward measuring write amplification. First, RB-Explorer quantifies the number of page programs using the low R/B signal level, the duration of which varies with the different operation (i.e., read, program, and erase) in NAND Flash. Second, RB-Explorer measures data volume written to NAND Flashes by considering parallelisms at four levels. Data volume written to a die in a NAND Flash is obtained as a product of the number Np of programs and page size Pa. Given the number Nchannel of channels, the number Nchip of chips per channel, and the number Ndie of dies per chip, one can obtain the data volume written to NAND Flashes as a product of Np, Pa, Ndie, Nchip, and Nchannel. RB-Explorer is applied to analyzing write amplification ratios of SSDs to track SSD endurance. Furthermore, we implement a real-world SSD (i.e., SSD-v) and employ a fine-tuned SSD simulator (i.e., SSDsim) to validate the accuracy of RB-Explorer. Our experimental results show that RB-Explorer improves on the accuracy of SSDsim-the state-of-the-art SSD simulator-in most tested cases. We conduct a series of me- surements using micro-benchmarks and I/O traces to demonstrate how RB-Explorer may be applied to investigate SSDs.
Keywords :
NAND circuits; flash memories; I/O techniques; NAND flash level; RB-explorer; SSD; SSD endurance; page programs; program-erase cycles; solid state disks; write amplification measurement; Flash memories; Government; Parallel processing; Semiconductor device measurement; Solids; Supercomputers; Volume measurement; NAND flash; Write amplification; performance; read/busy signal; solid state disk; write endurance;
fLanguage :
English
Journal_Title :
Computers, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9340
Type :
jour
DOI :
10.1109/TC.2014.2308207
Filename :
6748886
Link To Document :
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