Author :
Fukuoka, Kazuki ; Maeda, Noboru ; Nii, Koji ; Fujigaya, Masaki ; Sakamoto, Naohisa ; Koike, Toshiaki ; Irita, T. ; Wakahara, Kohei ; Matsuyama, Takashi ; Hasegawa, Kiyotomo ; Saito, Takashi ; Fukuda, Akira ; Teranishi, K. ; Kataoka, Takeshi ; Hattori, Tos
Abstract :
R-mobile U2 integrates an application processor and an LTE-capable triple-band baseband processor in 28-nm technology to provide rich content to the mid-range market. Several power-management techniques are equipped, including a low-leakage power switch, dual-standby mode static RAM (SRAM), and frequency control for maximum power suppression.
Keywords :
Long Term Evolution; SRAM chips; energy management systems; frequency control; microprocessor chips; LTE-capable triple-band baseband processor; R-Mobile U2; SRAM; dual-standby mode static RAM; frequency control; integrated application processor; low-leakage power switch; maximum power suppression; power-management technique; size 28 nm; Baseband; Leakage currents; Logic gates; MOS devices; Multicore processing; Transistors; 28-nm technology; application and LTE capable baseband processor; dual-standby mode SRAM; maximum power control; power switch;
