Title :
A WLAN RF CMOS PA With Large-Signal MGTR Method
Author :
Taehwan Joo ; Bonhoon Koo ; Songcheol Hong
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Abstract :
A CMOS linear power amplifier for wireless local area network IEEE 802.11b/g application is presented. To achieve high linear output power and high efficiency, a large-signal multigated transistor linearization method is proposed with an envelope injection gate bias circuit. A novel inter-stage matching transformer, which functions as a power splitter, is designed to implement this method. It is fabricated with a TSMC 0.13-μm standard RF CMOS process. Measurement shows 19.5-dBm Pout with 24.8% power-added efficiency (PAE) at - 25-dB error vector magnitude with an orthogonal frequency-division multiplexing 64-QAM 54-Mb/s 802.11g signal source and 23.15-dBm Pout with 31.73% PAE with DSSS, CCK, and 11-Mb/s 802.11b signal source without digital pre-distortion.
Keywords :
CMOS integrated circuits; OFDM modulation; UHF power amplifiers; field effect MMIC; linearisation techniques; microwave power amplifiers; wireless LAN; 64-QAM; CMOS linear power amplifier; IEEE 802.11b; IEEE 802.11g; RF CMOS PA; WLAN; bit rate 54 Mbit/s; envelope injection gate bias circuit; interstage matching transformer; large-signal MGTR method; multigated transistor linearization method; orthogonal frequency division multiplexing; power splitter; size 0.13 mum; standard RF CMOS process; wireless local area network; CMOS integrated circuits; Capacitance; Linearity; Logic gates; Power generation; Power transistors; Transistors; 802.11b/g; ${ g}_{{ m}3}$; AM-to-AM; AM-to-PM; CMOS; envelope injection gate bias circuit; error vector magnitude (EVM); fully on-chip; large-signal (LS) multigated transistor (MGTR); linearity; linearization; power amplifier (PA); third-order intermodulation distortion (IMD3); transmission-line transformer (TLT); wireless local area network (WLAN);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2013.2244228