Title :
Characteristics Variability Evaluation of Actual LSI Transistors with Nanoprobing
Author :
Fukui, M. ; Nara, Yumiko ; Fuse, J.
Author_Institution :
Hitachi High-Technol., Hitachinaka, Japan
Abstract :
In this paper, we propose an evaluation method of characteristics variability of MOS transistors in an actual circuit with nanoprobing. Based on the evaluation of a huge scale test structure, we verified that the nanoprobing had ability for varia-bility evaluations. And the evaluation of SRAM cells in an actual LSI die, we confirmed that a variation of threshold voltage is normal distribution.
Keywords :
MOSFET; SRAM chips; large scale integration; nanoelectronics; normal distribution; LSI die; LSI transistor; MOS transistor; SRAM cell; characteristics variability evaluation; evaluation method; nanoprobing; normal distribution; Large scale integration; MOSFETs; Plugs; Semiconductor device measurement; Threshold voltage; nanoprobing; variability; threshold voltage;;
Conference_Titel :
Test Symposium (ATS), 2012 IEEE 21st Asian
Conference_Location :
Niigata
Print_ISBN :
978-1-4673-4555-2
Electronic_ISBN :
1081-7735
DOI :
10.1109/ATS.2012.80
