Title :
A D-Band Keyable High Efficiency Frequency Quadrupler
Author :
Mingquan Bao ; Kozhuharov, Rumen ; Jingjing Chen ; Zirath, Herbert
Author_Institution :
Ericsson Res., Ericsson AB, Gothenburg, Sweden
Abstract :
A D-band frequency quadrupler consisting of two cascaded push-push doublers is designed and manufactured in a 0.25 μm InP DHBT technology. Each doubler has a Marchand balun implemented by broadside-coupled transmission lines, folded in a rectangular shape. The second balun, operating at a half of output frequency, is located inside of the first one for minimizing the chip size. The frequency quadrupler with a dc power consumption of 47 mW has a maximum conversion gain of 2 dB, and exhibits 12 to 25 dBc rejection ratio of the undesired first to fifth harmonics in the frequency range from 110 to 130 GHz. The quadrupler demonstrates a power efficiency of 10%, which is the highest among published quadruplers, as well as the highest conversion gain and an output power of 5 ~ 7 dBm without using power amplifiers. The chip size is 0.77 mm2. By switching a cascode transistor, the quadrupler can also be used as an on-off keying modulator.
Keywords :
III-V semiconductors; baluns; frequency multipliers; indium compounds; D-band keyable high-efficiency frequency quadrupler; DC power consumption; InP; Marchand balun; broadside-coupled transmission lines; cascode transistor; chip size minimization; conversion gain; efficiency 10 percent; frequency 110 GHz to 130 GHz; frequency quadrupler; gain 2 dB; indium phosphorous DHBT technology; maximum conversion gain; on-off keying modulator; power 47 mW; power amplifiers; power efficiency; push-push doubler; rectangular shape; rejection ratio; size 0.25 mum; undesired fifth harmonics; undesired first harmonics; Frequency conversion; Frequency modulation; Harmonic analysis; Impedance matching; Indium phosphide; Power generation; Transistors; DHBT; InP; frequency quadrupler; modulator; on-off keying;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2350694
