Title :
Effect of boundary on controlled memristor-based oscillator
Author :
Fouda, M.E. ; Radwan, A.G. ; Salama, K.N.
Author_Institution :
Engineering Mathematics Dept., Cairo University, Egypt
Abstract :
Recently, the applications of memristors have spread into many fields and especially in the circuit theory. Many models have been proposed for the HP-memristor based on the window functions. In this paper, we introduce a complete mathematical analysis of the controlled reactance-less oscillator for two different window functions of Joglekar´s model (linear and nonlinear dopant drift) to discuss the effect of changing the window function on the oscillator´s behavior. The generalized necessary and sufficient conditions based on the circuit elements and control voltages for both the linear and nonlinear models are introduced. Moreover, closed form expressions for the oscillation frequency and duty cycle are derived for these models and verified using PSPICE simulations showing an excellent matching. Finally a comparison between the linear and nonlinear models which shows their effect on the oscillation frequency and conditions of oscillation is introduced.
Keywords :
SPICE; memristors; oscillators; HP memristor; Joglekar model; PSPICE simulation; circuit theory; control voltage; controlled memristor based oscillator; controlled reactanceless oscillator; duty cycle; excellent matching; mathematical analysis; nonlinear dopant drift; nonlinear model; oscillation frequency; oscillator behavior; window functions; Integrated circuit modeling; Mathematical model; Memristors; Oscillators; Patents; Semiconductor process modeling; Sufficient conditions; Memristive-based circuits; Memristor; Memristor-based Oscillator; Nonlinear model Analysis;
Conference_Titel :
Engineering and Technology (ICET), 2012 International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-4673-4808-9
DOI :
10.1109/ICEngTechnol.2012.6396147