DocumentCode :
585069
Title :
Interaction of the high current relativistic electron beam with the monocrystalline target
Author :
Meshcherov, B.R. ; Tumanov, V.I.
Author_Institution :
I.V.Kurchatov Inst. of Atomic Energy Moscow, Moscow, Russia
fYear :
1990
fDate :
2-5 July 1990
Firstpage :
763
Lastpage :
768
Abstract :
Application possibility of the channeling radiation was investigated.
Keywords :
channelling radiation; electron beam effects; elemental semiconductors; silicon; Si; channeling radiation; critical current; high current relativistic electron beam; monocrystalline radiator; monocrystalline target; radiation damage; silicon monocrystals; Crystals; Electron beams; Films; Integrated circuits; Isotopes; Radiation effects; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High-Power Particle Beams, 1990 8th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
9.7898102055e+012
Type :
conf
Filename :
6396357
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=585069
بازگشت